Siemens Manuals

This document describes the features of BF 998R silicon N-channel MOSFET tetrode, suitable for low noise, gain-controlled input stages up to 1 GHz.

The DLR/DLO/DLG1414 is a four digit 5x7 dot matrix display module with a built-in CMOS integrated circuit. This display is a drop-in dot matrix replacement for the DL1414T with segmented characters. The integrated circuit contains memory, ASCII ROM decoder, multiplex circuitry and drivers. Data entry is asynchronous and random. A display system can be built using any number of DLX1414s since each character in any DLX1414 can be addressed independently and will continue to display the character last stored until replaced by another. System interconnection is very straightforward...

This document describes the features and characteristics of Semiconductor Group 1 11.96 Hyper Multi TOPLED® Hyper-Bright LED LSY T676, including its use as an optical indicator, backlighting, optical coupling into light pipes and lenses, color change capability, and suitability for various SMT assembly and soldering methods.

LR Z18 x, LY Z181, LG Z18 x are array LED, diffused with red, yellow and green light color. The luminous intensity is greater than 0.25 mcd. The product has a scattered characteristic and can be used as a multiple array.

This document presents the maximum ratings and electrical characteristics of the semiconductor components SMBTA 55 and SMBTA 56. These PNP silicon AF transistors feature high breakdown voltage and low collector-emitter saturation voltage.

HYB 3164800AJ/AT(L) -40/-50/-60 is a 64 MBit dynamic RAM organized as 8,388,608 by 8 bits. The device is fabricated in an advanced second generation process and features low power, high performance, low voltage and high reliability.

This document describes the NPN-Silicon-Phototransistor product from the BPY 62 Semiconductor Group. The product is specifically designed for applications in the range of 420 nm to 1130 nm, with high linearity and hermetically sealed metal package suitable for up to 125 °C. It is suitable for photointerrupters, industrial electronics, and control circuits.

BF 550 G is a PNP silicon RF transistor manufactured by Texas Instruments, suitable for RF amplifier circuits below 300MHz. It has the characteristics of low feedback capacitance and low output conductance.

SFH 521 and SFH 521 A are two α-β-γ radiation detectors. They have low dark current, low capacitance and high breakdown voltage, suitable for fully depleted chip operation.

The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line

The product is a 5mm (T1 3/4) LED with red, yellow, and green emission colors. The luminous intensity range is between 0.4-20.0 mcd. It can be used as an optical indicator. There are two packaging methods: with and without leads.