Siemens Manuals

SFH 400, SFH 401 and SFH 402 are GaAs infrared emitters.

BPX 43 is a NPN silicon phototransistor with applications from 450 nm to 1100 nm and high linearity. It is hermetically sealed in a metal package (TO-18) with a base connection and is suitable for 125°C environments. It can be used in photointerrupters and industrial electronics applications.

The BBY 51-03W is a high Q hyperabrupt tuning diode produced by Texas Instruments. It has a maximum reverse voltage of 7 V, a maximum forward current of 20 mA, and a working temperature range of -55°C to 150°C. The storage temperature range is -55°C to 150°C. This diode is mainly used in VCOs in mobile communications equipment.

The KPY 41-MR and KPY 46-MA/MR silicon pressure sensor modules feature high stability, excellent linearity, temperature compensated span and offset voltages, rugged stainless-steel housing, threaded pressure connection port, full scale 5 V output signal and open collector output.

The document describes a semiconductor chip used for driving magnets, motors, or other loads. The chip is designed for application in motor vehicles and operates in a temperature range of -40°C to 130°C. It contains two amplifiers with a typical open-loop voltage gain of 80 dB. The input stages are PNP differential amplifiers, resulting in a common-mode input voltage range from 0V to approximately the value of VS and a maximum input differential voltage of VS. To achieve low saturation voltages in the sink circuit, the drive circuit of the sink transistor is connected to the supply voltage. The chip also features an SOA protective circuit to protect against ground short-circuits. The source transistors are turned off at chip temperatures above approximately 160°C.

This document is a product information query document about the C167CR 16-bit CMOS single-chip microcontroller. It provides supplier and publishing information, and emphasizes liability only for components, not for applications, processes, and circuits implemented within components. The document describes the type of component and is not considered as assured characteristics. Delivery terms and rights to change design are reserved. For questions regarding technology, delivery, and prices, please contact the Semiconductor Group Offices in Germany or Siemens Companies and Representatives worldwide (see address list). Components may contain dangerous substances due to technical requirements. For information on the types in question, please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Please use the recycling operators known to you for packaging. We can also help you by contacting your nearest sales office. By agreement, we will take back packaging material if it is sorted. You must bear the costs of transport. For packaging material that is returned to us unsorted or which we are not obliged to accept, we will have to invoice you for any costs incurred.

CGY 0918 is a dual-band GSM/PCN power amplifier produced by Siemens AG. The output power can reach 35dBm/34dBm, and the working voltage is 3.5V. The device uses MMIC technology and contains 2 amplifiers inside, and supports soft start function of power supply voltage.

BC 807 BC 808 are bipolar transistors, PNP type, with high current gain, low collector-emitter saturation voltage and high collector current, suitable for general AF applications.

This document describes the features and characteristics of Semiconductor Group 1 11.96 Super Multi TOPLED® High-Current LED LOY T672, LSG T672, LSP T672 LOP T672, LOG T672, LYP T672. These LEDs are suitable for use in high ambient light conditions and can be used as optical indicators. They are appropriate for backlighting, optical coupling into light pipes and lenses. Both chips of the LED can be controlled separately, allowing for high signal efficiency through color change. Additionally, these LEDs are suitable for all SMT assembly and soldering methods.

This is an introduction to HYM724000/10GS-50/-60 4M x 72 ECC-Module

The HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The device utilizes a submicron CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins both internally and for the system user. Multiplexed address inputs permit the HYB3117805BSJ to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic test and in-line test equipment.

This file provides data information of Hyper TOPLED® RG Hyper-Bright LED LS T776, LA T776, LO T776, LY T776.

This document describes hyper-bright LED products produced in 1998, which can be used as optical indicators and light pipes. They have the characteristics of very bright luminous intensity and high stability.

This document describes a pulsed laser diode in a plastic package, which features reliable strained InGaAs/GaAs material, high power large-optical-cavity structure, and a single emitting area. It is mainly used in range finding, security surveillance, illumination, ignition, testing, and measurement applications.