Siemens Manuals

CGY31 is a monolithic microwave integrated circuit (MMIC amplifier) produced by Rohm & Haas of Germany. Its features include all-gold metallization, fully passivated chip, operating voltage range of 3 to 6V, 50 ohms input/output, input return loss greater than 10dB, gain of 18dB, low noise figure of 4dB, 3dB bandwidth of 2GHz, and hermetically sealed package.

This product is a N-channel enhanced logic level SIPMOS power transistor, with a maximum voltage of 55V, a maximum current of 20A, a switching loss of 0.07 ohm, and a TO-220AB package.

The data is about KPY 62-AK and KPY 69-AK silicon piezoresistive absolute pressure sensors, including product characteristics, marking, model, maximum rating, electrical characteristics, etc.

The HYB 5116400BJ/BT 4M x 4-DRAM is a 16MBit dynamic random access memory organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high system interconnectability, high reliability and cost effectiveness.

The HITFETBTS 941 Smart Lowside Power Switch is a logic level input product with ESD protection, thermal shutdown, overload protection, short circuit protection, overvoltage protection, current limitation, maximum current adjustable with external resistor, current sense, and status feedback with external input resistor.

BCX 51 . BCX 53 is a PNP silicon AF transistor manufactured by Texas Instruments, with characteristics of high collector current and low collector-emitter saturation voltage. The complementary type is BCX 54 - BCX 56 (NPN) with a SOT-89 package and a pin configuration of 1 2 3 B C E.

BAT 62 is a low power silicon Schottky diode for detectors up to GHz frequencies.

This document describes the maximum ratings and electrical characteristics of Semiconductor Group 1 Silicon Switching Diodes BAS 19...BAS 21.

This document describes the features and characteristics of Semiconductor Group 1 11.96 Hyper ARGUS® LED Hyper-Bright, 3 mm (T1), TS GaAIAs LED, Non Diffused LH K376 G, including its color, package, technological features, and applicable areas.

This document is a user manual for the Siemens Hearing Instrument, providing information on the quality and reliability of the product, as well as instructions for use.