Siemens Manuals

DLR2416 is a four-digit 5x7 dot matrix display module with a built-in CMOS integrated circuit. This display is X/Y stackable. The integrated circuit contains memory, ASCII ROM decoder, multiplexing circuitry and drivers. Data entry is asynchronous and can be random. A display system can be built using any number of DLR2416s since each digit can be addressed independently and will continue to display until the next data entry.

The document introduces the BFT 93 PNP Silicon RF Transistor from Semiconductor Group. This transistor is suitable for low distortion broadband amplifiers up to 1 GHz, with collector currents ranging from 2mA to 20mA. It has a maximum rated collector-emitter voltage of 12V and a collector current of 35mA. The document also provides the electrical characteristics of the transistor.

This document describes the features and characteristics of the BFT 92W PNP Silicon RF Transistor, which is suitable for broadband amplifiers up to 2GHz with collector currents up to 20mA.

This document describes the features and characteristics of the NPN silicon AF transistors BCW 60 and BCX 70 introduced by the Semiconductor Group. These transistors are suitable for AF input stages and driver applications, and have high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, etc.

This document describes the features and characteristics of the semiconductor product BAT 17, including its applications, maximum ratings, and electrical characteristics.

BAT 15-098 is a low noise silicon Schottky diode for DBS mixer applications, with a maximum reverse voltage of 4V and a maximum forward current of 110mA. The storage temperature range is -55 to +150 degrees Celsius, and the operating temperature range is -55 to +150 degrees Celsius. The power dissipation is 100mW

This document describes the features and characteristics of T T1 HiRel Silicon Schottky Diode BAT 15 Semiconductor Group 1. It is suitable for detector and mixer applications, has a medium barrier, and is housed in a hermetically sealed microwave package. It is qualified according to ESA/SCC Detail Spec. No.: 5106/014.

This document describes the ordering code, pin configuration, marking, package information, maximum ratings, and electrical characteristics of the BAT15-04 Dual Schottky Diode. The product is suitable for DBS mixer applications up to 12 GHz, with low noise figure and low barrier type.

BAT 15-014 to BAT 15-124 are low power, low avalanche junction silicon Schottky diodes designed for mixer applications. They are hermetically sealed in ceramic packages and can be used up to 40 GHz.

The document describes the Silicon Schottky Diodes BAT 15- ... S, which is an electrostatic discharge sensitive device that requires handling precautions. It features low dimension, high performance, and low barrier characteristics.