STB11NM80-STF11NM80-STP11NM80-STW11NM80 N-channel 800V-0.35Ω-11A-TO-220/FP-D2PAK-TO-247 MDmesh™ Power MOSFET is a low input capacitance and gate charge, low gate input resistance, industry best RDS(on) * Qg product, mainly used in switching applications.
This document provides a technical overview of the STMicroelectronics MDmesh™ Power MOSFET family, specifically models STB11NM80, STF11NM80, STP11NM80, and STW11NM80. These N-channel devices feature an 800V drain-source voltage rating, a maximum continuous drain current of 11A, and are designed for switching applications in power electronics.
| Drain-source voltage (VDS) | 800 V |
|---|---|
| Gate-source voltage (VGS) | ±30 V |
| Continuous drain current (ID) at TC = 25°C | 11 A |
| Pulsed drain current (IDM) | 44 A |
| Total dissipation at TC = 25°C (TO-220/D²PAK/ TO-247) | 150 W |
| Operating junction temperature (TJ) | -65 to 150 °C |
The maximum continuous drain current is 11 A when the case temperature (TC) is 25°C.
The maximum total power dissipation is 150 W for TO-220/D²PAK/TO-247 packages and 35 W for TO-220FP packages.