ROHM Manuals (Industrial)

US6X5 is a low frequency power transistor produced by ROHM, with a maximum collector current of 2A and a minimum saturation voltage of 370mV.

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This document describes the features and characteristics of the US6X6 Transistors Rev.B 1/2 low frequency amplifier, including large collector current and a maximum saturation voltage of 350mV.

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This document describes the features and characteristics of the 4V Drive Pch MOSFET UM6J1N from ROHM Co., Ltd., including the independence of the two RSU002P03 transistors in a single UMT package and the reduction in mounting cost and area.

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UM6K34N is a low cost, low power Nch+Nch MOSFET ideal for portable applications.

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This document describes the features and characteristics of ROHM's UM6K33N MOSFET product, including high-speed switching, small package, and ultra-low voltage drive.

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US6K1 is a N-channel MOSFET produced by ROHM company. It has the characteristics of low voltage drive, small package and low on-resistance.

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US6K2 is a 4V Drive Nch+Nch MOSFET that features high-speed switching and low On-resistance.

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US6K4 is a 1.8V drive Nch+Nch MOSFET produced by Toshiba, which has the characteristics of high-speed switching, low on-resistance and is suitable for switching applications.

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This document describes the features and characteristics of ROHM's 1.5V Drive Nch+Pch MOSFET, including low on-resistance, low voltage drive, and built-in G-S protection diode. It is suitable for applications such as internal circuit switching.

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US6M1 Transistors Rev.B is a silicon N-channel / P-channel MOSFET with low on-resistance, built-in G-S protection diode, and small surface mount package (TUMT6). It is suitable for power switching and DC/DC converter applications.

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US6M2 Nch+Pch MOSFET is a dual-channel MOSFET with low voltage drive, high switching speed and low on-resistance.

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US5U1 Nch+SBD MOSFET is a low voltage drive MOSFET device launched by ON Semiconductor. It has the characteristics of high switching speed, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switch power supply application.

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This document describes the features and characteristics of the US5U2 Transistors Rev.B 1/4 4V Drive Nch+SBD MOSFET, including high-speed switching, low on-resistance, 4V drive, and built-in low VF Schottky barrier diode.

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US5U3 is a high-voltage, low-voltage drive, low-voltage drop, high-switching frequency Nch+SBD MOSFET device. The device is packaged in TUMT5 and has a built-in low VF Schottky diode. It can be widely used in switch power supplies, DC/DC converters, LED drivers, motor drivers and other fields.

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US5U38 Transistor is a product that combines a silicon P-channel MOSFET with a Schottky barrier diode. It features low on-resistance, fast switching, and low voltage drive (2.5V). It is suitable for switching applications.

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The US6U37 is a 2.5V drive Nch+SBD MOSFET, which has the features of high-speed switching, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switching applications.

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UMX21N is a dual transistor produced by ROHM. Its features are very low output on resistance and low capacitance.

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US6T8 is a general-purpose amplifier suitable for low-frequency amplification and driver applications. Its features include: 1) Large collector current; 2) Low collector saturation voltage.

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US6T9 is a low frequency amplifier driver from ROHM, featuring large collector current and low collector saturation voltage.

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