ROHM Manuals (Industrial)

This document describes the features and characteristics of the 1.5V Drive Pch+Pch MOSFET TT8J21 produced by ROHM, including low on-resistance, high power package, and low voltage drive. The product is suitable for switching applications.

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This document introduces the structure, features, applications, and packaging specifications of ROHM's 1.5V Drive Pch + Pch MOSFET TT8J13. It is a silicon P-channel MOSFET with low on-resistance, small high power package, and low voltage drive capabilities.

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The TT8J11 is a 1.5V drive Pch + Pch MOSFET produced by ROHM. It has the characteristics of low voltage drive, low on-resistance, and small packaging.

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This document describes the structure, dimensions, features, and applications of the 1.2V Drive Pch MOSFET EM6J1 produced by ROHM Co., Ltd.

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This document describes the features and characteristics of the 1.5V Drive Pch+SBD MOSFET ES6U1 product from ROHM Co., Ltd.

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ES6U2 1.5V Drive Nch+SBD MOSFET is a device that integrates Nch MOSFET and Schottky diode. It has the characteristics of high switching speed, low on-resistance, low driving voltage, etc., and is suitable for internal circuit switching applications.

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The ES6U3 is a 4V drive Nch+SBD MOSFET from ROHM, which features high switching speed, low on-resistance, and a built-in low VF Schottky barrier diode. It can be used in internal circuit switching applications.

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ES6U41 is ROHM's 2.5V Drive Nch+SBD MOSFET, with high switching speed, low on-resistance, low drive voltage characteristics

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EM6M2 is a low voltage drive Nch+Pch MOSFET produced by ROHM. It has the characteristics of high switching speed, low driving voltage, and built-in G-S protection diode. It can be applied to switching circuits.

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EM6K31 is a Nch+Nch MOSFET from ROHM with high switching speed, small package and low drive voltage, suitable for switching applications.

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This document describes the features and characteristics of the EM6K33 product from ROHM Co. Ltd., including high-speed switching, small package size, and ultra-low voltage drive.

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The EM6K34 is a high-performance Nch + Nch MOSFET produced by ROHM, with high-speed switching, small package, and low drive voltage, used in switch power supplies and other fields.

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EM6K6 is a Nch+Nch MOSFET with 1/3 1.8V drive. It features independent MOSFET elements, low on-resistance, and low voltage drive, making it suitable for switching applications and portable equipment.

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EM6K7 is a Nch+Nch MOSFET produced by ROHM Co., Ltd. It features low voltage drive (1.2V) and space-saving.

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This document describes the features and characteristics of the EMX18 / UMX18N dual transistors, including two 2SC5585 chips in EMT or UMT packages, mounting possible with EMT3 or UMT3 automatic mounting machines, independent transistor elements to eliminate interference, and reduced mounting cost and area.

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EMX26 is a dual transistor produced by ROHM. Its core is 2SD2654, and its package is EMT6.

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EMZ8/UMZ8N is a dual transistor combination introduced by ROHM, consisting of 2SA2018 and 2SC2412K, both of which are packaged in EMT or UMT packages.

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The EMF6 dual transistor circuit is a power switching circuit that integrates the 2SA2018 and 2SK3019 transistors in a single EMT6 package. The circuit has the following features: 1. The power switching circuit is integrated in a single package, saving space and cost on the printed circuit board. 2. The polarity and pins of the two transistors are symmetrically designed to reduce the design difficulty and cost of the printed circuit board. 3. The pin spacing is 0.5mm, which is suitable for surface mount technology and meets the requirements of high density integration.

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