Panasonic Manuals (Industrial)

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2SJ163 is a silicon P-channel junction field effect transistor for general switching with low on-resistance and low noise characteristics.

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This document describes the features and characteristics of the 2SJ164 Silicon P-Channel Junction FET, which includes low ON-resistance and low-noise characteristics.

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2SJ0164 is a silicon P-channel junction field effect transistor from Toshiba with low on-resistance and low noise characteristics.

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2SK3193 is a N-channel power MOSFET produced by Mitsubishi Electric. It is mainly used in switching circuits. This device has the characteristics of high avalanche energy capability, high switching speed, low on resistance and no secondary breakdown.

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2SK0655 is a N-channel MOSFET with high switching speed and support radial lead-out.

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This document is a parameter table of LN533RAMR series three digit digital tube

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This document is a datasheet of LED products, including product model, package type, color, luminous intensity, working voltage, working temperature and other information.

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MA2SV03 is a variable capacitance diode from MACOM. It features large capacitance ratio, small current and is suitable for VCO applications.

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This is a Zener diode with high reliability, large power dissipation PD and wide voltage range VZ = 5.1V to 56.0V

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UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/121D/121E/121F/121K/121L are silicon NPN epitaxial planer transistors for digital circuits. The product features low cost, small size, easy automatic and manual insertion, and easy stand-alone fixing on the printed circuit board.

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The AN80xx series and the AN80xxM series are 3-pin, low dropout, fixed positive output type monolithic voltage regulators. Since their power consumption can be minimized, they are suitable for battery-used power supply and reference voltage. 13 types of output voltage are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.

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CNC7S101, CNZ3182, CNC7T101, CNC1H101 are ON Semiconductor's optoisolators that support AC input, with high I/O isolation voltage, high current transfer ratio (CTR) and high response speed.

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XN01601 is a composite transistor from Toshiba. It consists of a silicon PNP epitaxial planer transistor (Tr1) and a silicon NPN epitaxial planer transistor (Tr2). XN01601 has two elements incorporated into one package (emitter-coupled transistors), which reduces the mounting area and assembly cost by half.

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SKH00032BED MA2YD17 is a silicon based Schottky diode with high frequency rectification characteristics. Its reverse voltage VR = 100 V is guaranteed.

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This document is about the electro-optical characteristics, electrical characteristics, absolute maximum ratings of LN28RPX, LN38GPX, LN48YPX, LN88RPX. The document provides the electro-optical characteristics, electrical characteristics, absolute maximum ratings of the four products for reference.

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