Panasonic Manuals (Industrial)

2SC1573, 2SC1573A, 2SC1573B are Silicon NPN triple diffusion planer type transistors with high VCEO and fT characteristics.

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This document introduces the main specifications and parameters of the 365 PANEL DISPLAY UNITS, including clock frequency, supply voltage, input voltage, operating temperature, etc. It also provides product features such as display colors, dot diameter, dot pitch, and dot total number.

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The data table introduces the parameters of LN01201C(Q), LN01301C(Q), LN01401C(Q), LN01801C(Q) four LED products, including maximum power, working current, working voltage, light color, etc.

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This document introduces the technical information of PUA3213, PUB4213, PUB4513 three power transistor array products produced by Panasonic, including product characteristics and application circuits.

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PNA1601M (PN166) is a silicon NPN phototransistor for optical control systems. It features high sensitivity, wide spectral sensitivity, suited for detecting various kinds of LEDs, ultraminiature, thin side-view type package.

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The PNZ155 (PN155) is a silicon NPN phototransistor with a peak sensitivity wavelength of 800nm. It has a high photosensitivity of 0.05mA at 100lx and a fast response time of 4µs at 10V.

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The product is an extremely low noise, high stability zener diode, suitable for power supply stabilization. The product has extremely low noise voltage (2.4V to 39V, 1/3 to 1/10 of conventional products), excellent rising performance (in the low current range), easy to select the optimal diode (due to its finely divided zener voltage ranks), guaranteed reliability equivalent to that of conventional products (Mini type package), allowing to reduce the mounting area, thickness and weight substantially compared with those of conventional products, allowing both reflow and flow mode of automatic soldering, allowing automatic mounting by an existing chip mounter.

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UNR32A5 is a NPN transistor in the UNR series, which has the characteristics of high density, miniaturization, and low power consumption.

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This document introduces the UNR111x series transistors released in 2003, which have built-in resistors and are suitable for digital circuits. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. The UNR111x series transistors are packaged in M-type packages, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

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2SA1128 is a silicon PNP epitaxial planar type transistor for low-frequency output amplification. It features low collector to emitter saturation voltage VCE(sat) and optimum for low-voltage operation and for converter circuits.

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2SC2634 is a NPN type transistor with low noise and high forward current transfer ratio.

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This document introduces a transistor model 2SC2632, which is a silicon NPN epitaxial planar transistor suitable for low-frequency high breakdown voltage amplification. It features satisfactory linearity of forward current transfer ratio hFE, high collector to emitter voltage VCEO, and small collector output capacitance Cob.

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2SA1123 is a NPN silicon transistor produced by Toshiba of Japan. It is suitable for low-frequency high breakdown voltage amplification and is the complementary tube of 2SC2631. It has good forward current transfer ratio hFE, collector current IC characteristics, high collector to emitter voltage VCEO, small collector output capacitance Cob and other characteristics.

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2SC2497, 2SC2497A is a NPN power transistor from Panasonic. It is mainly used for low-frequency power amplification. Its features are high collector-emitter voltage VCEO and TO-126B package which requires no insulation plate for installation to the heat sink.

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The 2SC2295 is a NPN transistor produced by Toshiba. It is a high frequency amplifier with a Mini Type Package. It is ideal for FM/AM radios.

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2SA0963 (2SA963) is a silicon PNP power transistor produced by Toshiba Corporation. It has a large current output capability and is commonly used in low-frequency power amplifier circuits.

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2SA0921 (2SA921) is a silicon PNP epitaxial planar type transistor for high breakdown voltage low-noise amplification. It is complementary to 2SC1980.

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