Data sheet for M/A-COM MAPR-001011-850S00 Avionics Pulsed Power Transistor, detailing 850 W output, 1025‑1150 MHz operation and key electrical ratings.
The MAPR-001011-850S00 is an NPN silicon microwave power transistor designed for avionics applications. It features a common‑base configuration, broadband Class C operation, and a hermetic metal/ceramic package.
The datasheet provides electrical specifications such as 850 W output power, 1025‑1150 MHz frequency range, 80 V collector‑emitter breakdown voltage, and a peak collector current of 250 A, along with performance curves and test fixture dimensions.
| Collector‑Emitter Breakdown Voltage (BVCES) | 80 V |
|---|---|
| Collector‑Emitter Leakage Current (ICES) | 30 mA |
| Thermal Resistance (RTH‑JC) | 0.015 °C/W |
| Input Power (PIN) | 141 W |
| Power Gain (GP) | 7.8 dB |
| Load Mismatch Tolerance (VSWR‑T) | 5:1 |
| Load Mismatch Stability (VSWR‑S) | 1.5:1 |
| Peak Collector Current (IC) | 250 A |
| Power Dissipation @ +25 °C (PTOT) | 11.6 kW |
| Storage Temperature (TSTG) | -65 to +200 °C |
The transistor can deliver up to 850 W of output power.
It operates from 1025 MHz to 1150 MHz.
The peak collector current is rated at 250 A.
Load mismatch tolerance is VSWR‑T 5:1 and stability is VSWR‑S 1.5:1.