RN2210,RN2211 is a PNP type transistor launched by Toshiba. Its biggest feature is the integrated bias resistor, which can be used in a variety of switch circuits, inverter circuits, interface circuits, etc.
The RN2210 and RN2211 are PNP silicon transistors designed for switching, inverter, driver, and interface circuits. Their built‑in bias resistors reduce component count, enabling smaller and easier‑to‑assemble equipment.
The datasheet lists key electrical parameters such as collector‑base voltage, collector‑emitter voltage, emitter‑base voltage, collector current, power dissipation, and temperature limits, and includes handling guidelines for reliable use in various electronic applications. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | -50 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Maximum Collector Current (Ic) | 100 mA |
| Power Dissipation (Pc) | 300 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
| Operating Temperature Range (Ta) | -55 to 150 °C |
The maximum collector‑emitter voltage is -50 V.
The transistors can handle up to 100 mA of collector current.
The maximum power dissipation is 300 mW.
They are rated for operation from -55 °C to 150 °C.