RN2410 and RN2411 are PNP type silicon transistors produced by Toshiba. They are suitable for switching circuits, inverter circuits, interface circuits, and driver circuits. These transistors have built-in bias resistors, which can reduce the number of components and achieve miniaturization of equipment and labor-saving assembly. They are suitable for various circuit designs and are complementary to RN1410 and RN1411.
This datasheet provides the key electrical parameters, maximum ratings, and package information for the Toshiba RN2410 and RN2411 silicon PNP transistors. It includes collector‑base, collector‑emitter, and emitter‑base voltage limits, current ratings, power dissipation, and transition frequency data.
The document also contains part‑marking details, handling recommendations, and safety notices for semiconductor use in various electronic equipment. It is intended for designers and engineers integrating these transistors into circuits. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Maximum Collector Current (Ic) | 100 mA |
| Power Dissipation (Pc) | 200 mW |
| Operating Temperature | 150 °C |
| Storage Temperature | -55 °C to 150 °C |
| Transition Frequency (fT) | 200 MHz |
| Output Capacitance (Cob) | 3.6 pF |
The maximum collector current is 100 mA.
The transition frequency is up to 200 MHz.
Both collector‑base and collector‑emitter voltages are limited to -50 V.
The device can operate up to 150 °C and be stored from -55 °C to 150 °C.