This document describes the characteristics and parameters of the Toshiba 2SC5196 transistor, released on November 8, 2006. It highlights the optimal application of this transistor in power amplification and high-fidelity audio amplifier output stages. The document also provides the absolute maximum ratings and electrical characteristics of the product.
This datasheet describes the Toshiba 2SC5196 silicon NPN transistor, a triple‑diffused device intended for amplification use, such as 40 W high‑fidelity audio‑amp output stages. The document includes absolute maximum ratings, electrical parameters, and recommended operating conditions.
Key sections cover electrical characteristics (collector‑base voltage, collector‑emitter voltage, hFE, transition frequency, output capacitance), absolute maximum ratings (collector current 6 A, power dissipation 60 W, storage temperature –55 °C to 150 °C), safe operating area guidelines, and regulatory notes including RoHS compliance and usage precautions. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 80 V |
|---|---|
| Collector‑Emitter Voltage (VcE) | 80 V |
| Emitter‑Base Voltage (VEB) | 5 V |
| Collector Power Dissipation (Pc) | 60 W |
| Storage Temperature Range | -55 °C to 150 °C |
The collector‑emitter voltage rating is 80 V.
The device can be stored between –55 °C and 150 °C.