The document describes the features and characteristics of the MT3S06S model NPN silicon transistor produced by Toshiba, including its low voltage operation and low noise properties in the VHF~UHF frequency range. The document lists performance parameters such as noise figure and insertion power gain for this model, and provides detailed information on maximum ratings and electrical characteristics.
The MT3S06S is a silicon NPN epitaxial planar transistor designed for VHF/UHF low‑voltage operation with low noise performance. The datasheet lists its key electrical parameters, microwave characteristics, and recommended static‑discharge handling procedures.
Key specifications include a collector‑base voltage rating of 10 V, emitter‑base voltage of 1.5 V, collector current up to 15 mA, a noise figure as low as 1.6 dB, and a transition frequency (fT) between 7 GHz and 10 GHz. Users are advised to implement strict ESD protection when handling the device. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 10 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | 1.5 V |
| Collector Current (Ic) | 15 mA |
| Noise Figure (NF) | 1.6 dB |
| Transition Frequency (fT) | 7‑10 GHz |
The maximum collector‑base voltage is 10 V.