This document describes the features and applications of the KSR-2005-000 1 SRC1205SF NPN silicon transistor. It also provides ordering information and outline dimensions. The product features built-in bias resistors, which simplify circuit design and reduce the quantity of parts and manufacturing process. It is suitable for switching applications, interface circuits, and driver circuit applications.
The SRC1205SF is an NPN silicon transistor intended for switching applications. It features built‑in bias resistors, high packing density, and a simplified circuit design that reduces part count.
The datasheet lists absolute maximum ratings, electrical characteristics, pin connections, and typical performance curves, including voltage, current, power dissipation, gain, and transition frequency specifications.
| Output Voltage (Vo) | 50 V |
|---|---|
| Input Voltage (Vi) | 12 V |
| Output Current (Io) | 100 mA |
| Power Dissipation (Pp) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
| DC Current Gain (hFE) | 80 – 200 |
| Transition Frequency (fT) | 200 MHz |
| Input Current (Ii) | 3.6 mA |
The maximum collector‑emitter voltage is 50 V.
The transistor can handle up to 100 mA of output current.
The DC current gain (hFE) ranges from 80 to 200.