This document describes the features and characteristics of the SRC1204M NPN Silicon Transistor with model number KSR-I004-000, including built-in bias resistors, simplified circuit design, reduction in parts and manufacturing process, and high packing density.
The SRC1204M is an NPN silicon transistor designed for switching applications. It features built‑in bias resistors, high packing density, and reduces the number of external parts required.
The datasheet lists absolute maximum ratings, electrical characteristics, and includes characteristic curves for output current, voltage, and gain. Key parameters such as voltage limits, current capability, power dissipation, and transition frequency are detailed for design reference.
| Maximum Collector‑Emitter Voltage | 50 V |
|---|---|
| Maximum Input Voltage | 40 V |
| Maximum Output Current | 100 mA |
| Power Dissipation | 400 mW |
| Junction Temperature (max) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| DC Current Gain (hFE) | 80 – 200 |
| Output Cut‑off Current | 500 nA |
| Transition Frequency (ft) | 200 MHz |
| Input Current | 0.18 mA |
The maximum collector‑emitter voltage is 50 V.
The transistor can dissipate up to 400 mW.
The DC current gain (hFE) ranges from 80 to 200.
The transition frequency is specified as 200 MHz.