Toshiba JDH2S02SC silicon epitaxial Schottky diode, with a maximum rated voltage of 10V, a maximum forward current of 10mA, and a SC2 package. The rated operating temperature is -55~125℃.
The JDH2S02SC is a silicon epitaxial Schottky barrier diode offered by Toshiba. It is designed for UHF band detection circuits and features a compact package.
The document lists absolute maximum ratings, detailed electrical parameters such as reverse voltage, forward current, forward voltage, and terminal capacitance, as well as handling precautions and usage restrictions for the component. This manual is written in Japanese.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Forward Current (IF) | 10 mA |
| Storage Temperature Range | -55 °C to 125 °C |
| Forward Voltage (VE) at IF=1 mA | 0.24 V |
| Forward Current (IF) at VF=0.5 V | 2 mA |
| Reverse Current (IR) at VR=0.5 V | 25 µA |
| Terminal Capacitance (CT) at VR=0.2 V, f=1 MHz | 0.625 pF |
The diode’s maximum reverse voltage rating is 10 V.
It can be stored from –55 °C up to 125 °C.