This datasheet provides the electrical specifications of the Toshiba SSM3K36TU silicon N‑channel MOSFET, such as drain‑source voltage, gate‑source voltage, on‑resistance, and capacitances. It also includes dynamic input characteristics and typical switching waveforms.
The document contains usage and handling precautions, package dimensions, and a disclaimer about the intended applications and reliability considerations for the device. This manual is written in Japanese.
| Drain‑Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate‑Source Voltage (V_GS) | 10 V |
| On‑Resistance (R_ON) at V_GS=4.5 V, I_D=200 mA | 0.66 Ω |
| Input Capacitance (C_iss) | 46 pF |
| Reverse Transfer Capacitance (C_rss) | 7.3 pF |
The device is rated for a maximum drain‑source voltage of 20 V.
A gate‑source voltage of up to 10 V is specified for the MOSFET.