This document introduces the Fuji IGBT module application manual released by Fuji Electric Company in 2004, including the construction and characteristics of the components, the characteristics of the IGBT module, precautions in application, troubleshooting methods, protection circuit design methods, heat dissipation design methods, gate drive circuit design methods, parallel connection, evaluation and measurement methods, and other information.
The document explains the construction and key features of Fuji IGBT modules, comparing them with power MOSFETs and detailing their high‑voltage, large‑capacity and fast‑switching advantages. It covers generation characteristics, design considerations, thermal management and testing procedures.
Chapters provide practical usage precautions, failure diagnosis methods, short‑circuit protection circuits and measurement techniques, helping engineers integrate the modules safely and efficiently into power conversion systems. This manual is written in Japanese.
| Voltage rating | 600 V |
|---|---|
| Current rating | 50 A |
| Voltage rating (higher generation) | 1200 V |
They provide lower on‑state resistance compared with power MOSFETs, enabling high voltage, large capacity and fast switching.
The modules include built‑in short‑circuit protection circuits described in Chapter 5.
Chapter 6 outlines heat‑dissipation calculations and cooling‑device selection for the IGBT modules.
Section 3 lists handling, storage, and mounting precautions to avoid damage and ensure reliable operation.