This document describes the features and characteristics of N-channel silicon junction field-effect transistors of BF246A, BF246B, BF246C, BF247A, BF247B, and BF247C models, including pin definitions, application areas, and main parameters.
This datasheet provides technical specifications for a series of N-channel silicon junction field-effect transistors (FETs) manufactured by Philips Semiconductors. The devices, designated BF246A, BF246B, BF246C, BF247A, BF247B, and BF247C, are general-purpose components available in a plastic TO-92 variant package. They feature interchangeability of drain and source connections and are designed for use in VHF and UHF amplifiers, mixers, and general-purpose switching applications. The document details limiting values, thermal characteristics, static and dynamic characteristics, and package dimensions.
| Frequency | up to 450 MHz |
|---|---|
| Package Type | plastic TO-92 variant |
| Drain-Source Voltage (VDS) | ± 25 V |
| Total Power Dissipation (Ptot) | 400 mW |
| Operating Junction Temperature (Tj) | 150 °C |
| Drain Current (IDSS) BF246A/BF247A | 30 - 80 mA |
| Drain Current (IDSS) BF246B/BF247B | 60 - 140 mA |
| Drain Current (IDSS) BF246C/BF247C | 110 - 250 mA |
| Thermal Resistance (Rth j-a) | 250 K/W |
They are suitable for VHF and UHF amplifiers, mixers, and general purpose switching.
Yes, the devices feature interchangeability of drain and source connections.
The maximum operating junction temperature is 150 °C.