STE180NE10 is an N-channel 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET product of STMicroelectronics, with a typical RDS(on) of 4.5 mΩ, 100% avalanche testing, low intrinsic capacitance, minimized gate charge and reduced voltage spread.
This document provides a comprehensive technical overview of the STE180NE10, an N-channel 100V - 4.5 mΩ - 180A Isotop stripFET™ Power MOSFET. It highlights key features such as low intrinsic capacitance, minimized gate charge, and 100% avalanche testing. The device is designed for high packing density and manufacturing reproducibility using STMicroelectronics' unique process.
| Drain-source Voltage | 100 V |
|---|---|
| Drain Current (continuous) at 25 °C | 180 A |
| Total Dissipation at 25 °C | 360 W |
| Storage Temperature | -55 to 150 °C |
| Max. Operating Junction Temperature | 150 °C |
| Input Capacitance | 2.5 nF |
The device is suitable for SMPS & UPS, motor control, welding equipment, and output stages for PWM and ultrasonic circuits.
Yes, the device is 100% avalanche tested.
The maximum repetitive or non-repetitive avalanche current is 60 A.