STE180N10 is a N-channel power MOSFET from ISOTOP company. Its features are RDS(on) typical value is 5.5mΩ, 100% avalanche tested, low parasitic capacitance, minimized gate charge and reduced voltage spread.
This document is a datasheet for the STE180N10, an N-channel Isotop Power MOSFET manufactured by STMicroelectronics. It is designed for industrial applications such as SMPS, UPS, motor control, and welding equipment, featuring a typical on-resistance of 5.5 mΩ and 100% avalanche testing.
The datasheet provides comprehensive technical specifications including absolute maximum ratings, electrical characteristics (static, dynamic, and switching), avalanche characteristics, and source-drain diode parameters. It also includes thermal data, typical application graphs, and mechanical dimensions.
| Drain-source Voltage | 100 V |
|---|---|
| Drain Current (continuous) at Tc = 25°C | 180 A |
| Total Dissipation at Tc = 25°C | 450 W |
| Typical On Resistance | 5.5 mΩ |
| Junction Temperature Max | 150°C |
The device is intended for SMPS & UPS, motor control, welding equipment, and output stages for PWM and ultrasonic circuits.
Yes, the datasheet states that the device is 100% avalanche tested.
The maximum pulsed drain current (IDM) is 540 A.