STE110NA20 is an N-channel enhancement mode fast power MOS transistor with features such as low on-resistance, high current power module, large SOA, easy mounting, low thermal resistance, and low internal parasitic inductance. It is suitable for applications such as SMPS, UPS, motor control, welding equipment, output stage for PWM, ultrasonic circuits, etc.
This document is a preliminary datasheet for the STE110NA20, an N-channel enhancement mode fast power MOS transistor manufactured by SGS-THOMSON Microelectronics. The device is designed for high current applications, featuring a continuous drain current of 110A at 25°C and a maximum operating junction temperature of 150°C.
The datasheet provides comprehensive electrical characteristics, including breakdown voltage, on-resistance, and switching times. It also includes thermal data, avalanche characteristics, and safe operating area (SOA) graphs to assist engineers in circuit design for applications such as SMPS, UPS, motor control, and welding equipment.
| Drain-source Voltage | 200 V |
|---|---|
| Drain Current (continuous) at 25°C | 110 A |
| Total Dissipation at 25°C | 450 W |
| Max. Operating Junction Temperature | 150 °C |
The device is suitable for SMPS & UPS, motor control, welding equipment, and output stages for PWM and ultrasonic circuits.
Yes, the package is recognized as isolated.
The maximum repetitive or non-repetitive avalanche current is 55 A.