STE110NS20FD is a N-channel 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY™ Power MOSFET device produced by STMicroelectronics. The device has the following features: typical RDS(on) = 0.022Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, ±20V gate to source voltage rating, low intrinsic capacitance and fast body-drain diode: low trr, Qrr. The device is suitable for high current, high speed switching, switch mode power supply (SMPS), welding equipment DC-AC converter and uninterrupted power supply and motor drive applications.
This document is a datasheet for the STE110NS20FD, an N-Channel 200V Power MOSFET utilizing STMicroelectronics' Isotop Mesh Overlay™ process. The device is designed for high current, high speed switching applications such as Switch Mode Power Supplies (SMPS), DC-AC converters for welding equipment, and uninterruptible power supplies.
| Drain-source Voltage | 200 V |
|---|---|
| Drain Current (continuous) | 110 A |
| Storage Temperature | -65 to 150 °C |
The device is suitable for high current, high speed switching, Switch Mode Power Supply (SMPS), DC-AC converters for welding equipment, and uninterruptible power supply and motor drive.
The maximum operating junction temperature is 150 °C.
The typical on-resistance (RDS(on)) is 0.022 Ω.