The document describes the features and characteristics of the HCF4011B, a CMOS device, including propagation delay time, buffered inputs and outputs, standardized symmetrical output characteristics, and specified quiescent current.
The HCF4011B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology, available in DIP and SOP packages. It features buffered inputs and outputs with standardized symmetrical output characteristics. The device provides the system designer with direct implementation of the NAND function and supplements the existing family of CMOS gates.
| Supply Voltage | -0.5 to +22 V |
|---|---|
| Operating Temperature | -55 to +125 °C |
| Input Leakage Current | 100nA (MAX) at VDD = 18V |
| Propagation Delay Time | 60ns (Typ.) at VDD = 10V |
| Quiescent Current | Specified up to 20V |
| Package Types | DIP and SOP |
The typical propagation delay time is 60ns at VDD = 10V.
The maximum input leakage current is 100nA at VDD = 18V.
Yes, the device is 100% tested for quiescent current.