This datasheet provides comprehensive information on the M95512-W, M95512-R, M95512-DR, and M95512-DF devices, including their features, characteristics, and specifications.
This document is a datasheet for the M95512-W, M95512-R, M95512-DR, and M95512-DF devices, which are Electrically Erasable Programmable Memories (EEPROMs) organized as 65536 x 8 bits and accessed through the Serial Peripheral Interface (SPI) bus. The devices offer a memory array of 512 Kb (64 Kbytes) with a page size of 128 bytes and support high-speed clocking up to 10 MHz.
| Memory array | 512 Kb (64 Kbytes) |
|---|---|
| Page size | 128 bytes |
| Write cycles | More than 4 million |
| Data retention | More than 200 years |
| Operating temperature range | -40°C to +85°C |
| High-speed clock | 10 MHz |
| Supply voltage (M95512-W) | 2.5 V to 5.5 V |
| Supply voltage (M95512-R/DR) | 1.8 V to 5.5 V |
| Supply voltage (M95512-DF) | 1.7 V to 5.5 V |
| Byte Write time | within 5 ms |
| Page Write time | within 5 ms |
The page size is 128 bytes.
The devices support more than 4 million write cycles.
The data retention is more than 200 years.
The M95512-DF model supports a supply voltage from 1.7 V to 5.5 V.