This document provides information on the features and characteristics of M48Z512A/Y/V ZEROPOWER® RAM, including integrated ultra low power SRAM, power-fail control circuit, and battery, unlimited WRITE cycles, 10 years of data retention in the absence of power, automatic power-fail chip deselect and WRITE protection, etc.
The M48Z512A, M48Z512AY, and M48Z512AV are non-volatile, 4 Mbit static RAM devices organized as 524,288 words by 8 bits. These devices combine an internal lithium battery, a CMOS SRAM, and a control circuit in a 32-pin plastic DIP module. They provide conventional SRAM operation with unlimited write cycles and 10 years of data retention in the absence of power.
| Memory Capacity | 4 Mbit (512 Kbit x 8) |
|---|---|
| Organization | 524,288 words by 8 bits |
| Data Retention | 10 years |
| Write Cycles | Unlimited |
| Package Type | PMDIP32 |
| Supply Voltage (M48Z512A) | 4.75 to 5.5 V |
| Supply Voltage (M48Z512AY) | 4.5 to 5.5 V |
| Supply Voltage (M48Z512AV) | 3.0 to 3.6 V |
The device provides 10 years of data retention in the absence of power.
No, the device supports conventional SRAM operation with unlimited write cycles.
No, the M48Z512AV is not recommended for new design.