The TMBAT49 is a general purpose metal to silicon diode from STMicroelectronics with very low turn-on voltage and fast switching speed.
The TMBAT49 is a general purpose metal to silicon diode designed with integrated MELF protection against excessive voltage, such as electrostatic discharges. Key features include a very low turn-on voltage and fast switching capabilities suitable for small signal applications.
| Repetitive peak reverse voltage | 80 V |
|---|---|
| Forward continuous current | 500 mA |
| Repetitive peak forward current | 3 A |
| Surge non repetitive forward current | 10 A |
| Storage temperature range | - 65 to +150 °C |
| Operating junction temperature range | - 65to +125 °C |
| Junction to lead thermal resistance | 110 °C/W |
| Reverse leakage current (max) | 200 uA |
| Forward voltage drop (typ) | 0.42 V |
| Diode capacitance (max) | 120 pF |
The device can be stored in a temperature range from -65 to +150 °C.
The diode has a repetitive peak reverse voltage rating of 80 V.
The maximum forward voltage drop is 0.42 V when the current is 100 mA.