TMMBAT 41 is a small signal Schottky diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex- cessive voltage such as electrostatic discharges.
This document is a technical datasheet for the TMMBAT41, a general purpose metal to silicon Schottky diode. The device features very low turn-on voltage and fast switching capabilities suitable for various applications.
The publication provides absolute ratings including maximum reverse voltage of 100V and forward current limits up to 350mA peak. It also details electrical characteristics such as forward voltage drop, junction capacitance, and thermal resistance values.
| Repetitive Peak Reverse Voltage | 100 V |
|---|---|
| Forward Continuous Current | 100 mA |
| Repetitive Peak Forward Current | 350 mA |
| Surge non Repetitive Forward Current | 750 mA |
| Power Dissipation | 100 mw |
| Storage and Junction Temperature Range | -65 to +150 °C |
The typical forward voltage (VF) is 0.45V when the junction temperature is 25°C and the current is 1mA.
The typical junction capacitance (CJ) is 2 pF when the reverse voltage is 1V and frequency is 1MHz.