TMMBAT 47 and TMMBAT 48 are small signal Schottky diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.
This document provides technical specifications for the TMMBAT 47 and TMMBAT 48, which are general purpose, metal to silicon Schottky diodes. These devices are designed for applications requiring very low turn-on voltage and fast switching speeds, with integrated protection against excessive voltage such as electrostatic discharges.
| Forward Continuous Current | 350 mA |
|---|---|
| Power Dissipation | 330 mW |
| Storage Temperature Range | - 65 to 150 °C |
| Junction Temperature Range | - 65 to 125 °C |
| Junction-to-Leads Thermal Resistance | 300 °C/W |
| Reverse Leakage Current (Typical) | 1 pA (TMMBAT47) / 2 pA (TMMBAT48) |
| Forward Voltage (Typical) | 0.25 V to 1.0 V |
| Package Type | MINIMELF Glass |
The storage and junction temperature range is from -65 to 150 °C.
Yes, they feature integrated protection against excessive voltage such as electrostatic discharges.
The typical forward voltage is 0.25 V at 0.1 mA for all types.