The TD350E is an advanced IGBT/MOSFET driver with features including 1.5A source/2.3A sink gate drive, active Miller clamp, two-level turn-off with adjustable level and delay, desaturation detection, fault status output, negative gate drive capability, input compatible with pulse transformer or optocoupler, separate sink and source outputs for easy gate driving, UVLO protection, and 2kV ESD protection. It is suitable for use in 1200V, 3-phase inverters, motor control, and UPS systems.
The TD350E is an advanced gate driver designed for IGBTs and power MOSFETs in applications such as 1200 V three-phase inverters, motor control, and UPS systems. It includes integrated control and protection functions to ensure high reliability.
Key features include a 1.5 A source/2.3 A sink gate drive capability, an active Miller clamp that eliminates the need for negative gate drive in most applications, and two-level turn-off with adjustable level and delay. The device also offers desaturation detection, fault status output, and compatibility with pulse transformers or optocouplers.
| Gate drive source/sink (typ) | 1.5 A / 2.3 A |
|---|---|
| Operating temperature range | -40 to +125 °C |
| Maximum supply voltage (VH-VL) | 26 V |
| Desaturation threshold | 7.9 V max |
| ESD protection (HBM) | 2 kV |
It is designed for use in 1200 V, 3-phase inverters, motor control systems, and UPS systems.
The device is compatible with both pulse transformer and optocoupler signals.