74V2T132 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The document describes the 74V2T132, an advanced high-speed CMOS single 2-input NAND gate fabricated with sub-micron silicon gate technology. It features hysteresis and is designed for low power dissipation with typical propagation delays of 3.7 ns at Vcc = 5V.
| Propagation Delay (Typical) | 3.7 ns at Vcc = 5V |
|---|---|
| Power Dissipation (Max) | 1 mW at Ta = 25°C |
| Typical Hysteresis Voltage | 0.8V at Vcc = 4.5V |
| Operating Voltage Range | 4.5V to 5.5V |
| Output Impedance (Min) | 8 mA |
| Supply Voltage (Recommended) | 4.5 to 5.5 Vv |
| Operating Temperature Range | -55 to +125 °C |
The typical propagation delay (tpp) is 3.7 ns at Vcc = 5V.
The device operates with a supply voltage (Vcc) between 4.5 and 5.5 Vv.
The maximum power dissipation (loc) is 1 mW at Ta = 25°C.