This document describes the features and characteristics of the VNS3NV04DP-E OMNIFET II fully autoprotected Power MOSFET. The product features linear current limitation, thermal shutdown, short circuit protection, integrated clamp, and diagnostic feedback through the input pin.
The VNS3NV04DP-E is an OMNIFET II device consisting of two monolithic chips housed in a standard SO-8 package. It is designed for use in up to 50 kHz DC applications as a replacement for standard Power MOSFETs. The device integrates built-in protection features including overvoltage clamping, linear current limitation, and thermal shutdown to operate safely in harsh environments.
| Max on-state resistance (per channel) | 120 mΩ |
|---|---|
| Current limitation (typical) | 3.5 A |
| Drain-source clamp voltage | 40 V |
| Operating junction temperature | Internally limited |
| Storage temperature | -55 to 150 °C |
The typical current limitation is 3.5 A.
Yes, it is ECOPACK compliant, meaning it is lead free and RoHS compliant.