The VNS1NV04DP-E is an OMNIFET II fully autoprotected power MOSFET with features including linear current limitation, thermal shutdown, short circuit protection, integrated clamp, etc.
The VNS1NV04DP-E is an OMNIFET II device formed by two monolithic chips housed in a standard SO-8 package. It is designed for replacement of standard Power MOSFETs from DC up to 50KHz, offering built-in protection features such as thermal shutdown, linear current limitation, and overvoltage clamp.
The document provides detailed electrical specifications including absolute maximum ratings, thermal data, and dynamic characteristics like switching times and capacitance. It also covers protection mechanisms for overtemperature, short circuits, and fault feedback monitoring.
| Drain-source clamp voltage (typ) | 40 V |
|---|---|
| Current limitation (typ) | 1.7 A |
| Operating junction temperature range | -55 to 150 °C |
| Total dissipation at Tj = 25 °C | 4 W |
The device has an internally limited operating junction temperature, with a storage temperature range of -55 to 150 °C.
The typical current limitation is 1.7 A, with a maximum of 3.5 A under specific test conditions.