The VNB35NV04, VNP35NV04, VNV35NV04, and VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
This document describes the VNB35NV04, VNP35NV04, VNV35NV04, and VNWS35NV04 monolithic devices designed in STMicroelectronics VIPower MO0-3 Technology. These OmniFET II devices are intended for replacement of standard Power MOSFETs in DC up to 25KHz applications and are available in PowerSO-10, D2PAK, TO-220, and TO-247 packages.
| Operating Junction Temperature | Internally limited |
|---|---|
| Storage Temperature | -55 to 150 °C |
The device is intended for applications from DC up to 25KHz.
Yes, it includes an overvoltage clamp protection internally set at 45V.