VND10N06 / VND10N06-1 fully autoprotected Power MOSFET is a MOSFET produced by STMicroelectronics company, which has the characteristics of linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current input pin, logic level input threshold, ESD protection, Schmitt trigger at input and high noise immunity.
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower pure MOS technology. They are intended for replacement of standard Power MOSFETs in DC to 50KHz applications, specifically for overvoltage protection. The devices include built-in thermal shutdown, linear current limitation, and overvoltage clamp to protect the chip in harsh environments.
| Current limitation (typ) | 10 A |
|---|
Yes, the device includes built-in thermal shutdown protection.
The typical current limitation is 10 A.