STMicroelectronics VNP10N06 Fully Autoprotected Power MOSFET Datasheet

The VNP10N06 is a fully protected power MOSFET with a maximum voltage of 60V, a conduction resistance of 0.3 ohms, and a maximum current of 10A. It has the features of linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low input current consumption, logic level input threshold, ESD protection, Schmitt trigger input, high noise immunity, standard TO-220 package, etc.


STMicroelectronics VNP10N06 Fully Autoprotected Power MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Power Management
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
272 KB
Published
08 August, 2012
Updated
30 September, 2023
MD5 checksum
9C65F171C7C75D2E708DA65C78FAEE09

About this manual

The VNP10N06 is a monolithic device using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETs in DC to 50 kHz applications. It features built-in thermal shut-down, linear current limitation, and overvoltage clamp to protect the chip in harsh environments.

What's inside

  • Description
  • Absolute Maximum Rating
  • Electrical Characteristics
  • Protection Features
  • Thermal Impedance
  • Mechanical Data

Specifications

Total Dissipation42 W
Operating Junction TemperatureInternally Limited
Storage Temperature-55 to 150 °C
Package TypeTO-220

Frequently asked questions

What is the maximum operating junction temperature?

The device has an internally limited operating junction temperature.

What is the maximum storage temperature range?

The device can be stored between -55 and 150 degrees Celsius.

What is the maximum total dissipation at 25 degrees Celsius?

The total dissipation is 42 watts at a case temperature of 25 degrees Celsius.

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