VNP10N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- tation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
The VNP10N07 is a monolithic device made using STMicroelectronics ViPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It features built-in thermal shut-down, linear current limitation, and overvoltage clamp protection.
| Drain-source Voltage (Vin = 0) | Internally Clamped Vv |
|---|---|
| Input Voltage | 18 Vv |
| Reverse DC Output Current | -14 A |
| Total Dissipation at Tj = 25 °C | 50 w |
| Operating Junction Temperature | Internally Limited |
| Storage Temperature | -55 to 150 °C |
| Drain-source Clamp Voltage (Ip=200mA) | 60 Vv |
| Drain Current Limit (Vin=10V) | 7 A |
The device is intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Overtemperature cutout occurs at a minimum of 150°C.