The STP22NE03L is the latest development of SGS-THOMSON's unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
This document is a datasheet for the STP22NE03L, an N-channel enhancement mode power MOSFET manufactured by SGS-THOMSON Microelectronics. The device features a unique "Single Feature Size™" strip-based process, offering high packing density for low on-resistance and rugged avalanche characteristics. It is designed for high current, high speed switching applications such as motor control, audio amplifiers, and automotive environments including ABS and air-bag systems.
The datasheet provides comprehensive technical specifications including absolute maximum ratings, electrical characteristics for ON and OFF states, dynamic switching parameters, and avalanche characteristics. It also includes thermal data, a schematic diagram, and mechanical dimensions for the TO-220 package. The document specifies a maximum drain-source voltage of 30 V and a continuous drain current of 22 A at 25 °C.
| Package Type | TO-220 |
|---|
The device is suitable for high current, high speed switching, solenoid and relay drivers, motor control, audio amplifiers, DC-DC & DC-AC converters, and automotive environments.
The maximum operating junction temperature is 175 °C.