STMicroelectronics AN2679 Smart Inductive Proximity Switch Application Note

AN2679 Application note Smart inductive proximity switch introduces the design principle, circuit description, usage and features of STEVAL-IFS006V1 inductive proximity switch demonstration board, which is suitable for simple, price-sensitive applications.


STMicroelectronics AN2679 Smart Inductive Proximity Switch Application Note - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Application Note
Language
English
Pages
16
File format
PDF
File size
209 KB
Published
06 August, 2012
Updated
30 September, 2023
MD5 checksum
D3C6DC91E87B955875F699505B3B6893

About this manual

This document describes the STEVAL-IFSOO6V1, a demonstration board designed for smart inductive proximity switches. The board utilizes a single transistor HF oscillator, an ST7LITEUSS microcontroller, and the TDE1708DFT intelligent power switch to detect metal objects via the eddy current effect. It offers features such as sensitivity adjustment, temperature compensation, and PNP/NPN output configurations.

What's inside

  • Sensor overview
  • Sensor circuit description
  • Initial configuration and jumper settings
  • Output driver configurations
  • Application schematic
  • Bill of materials
  • Software implementation
  • References
  • Revision history

Specifications

Supply voltage6 V to 48 VDC
Temperature range-25 °C to +85 °C
Oscillator frequency range100 KHz to 800 kHz
MicrocontrollerST7LITEUSS
Power switchTDE1708DFT

Frequently asked questions

What is the supply voltage range for the demonstration board?

The board supports a supply voltage range of 6 V to 48 VDC.

What is the operating supply voltage range for this demonstration board?

The board operates with a DC supply voltage between 6 V and 48 V.

What is the specified operating temperature range for this device?

The board functions within a temperature range of -25 °C to +85 °C.

How does the oscillator frequency vary with temperature according to the text?

The voltage across diode D2 reduces by approximately -2 mV/k as temperature increases.

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