The MAT01 is a dual NPN transistor with excellent matching and high input gain.
The MAT01 is a monolithic dual NPN transistor designed for low power and low level input stages. It utilizes an exclusive Silicon Nitride Triple-Passivation process to ensure excellent stability of critical parameters over temperature and time. Key matching characteristics include an offset voltage of 40 µV and a temperature drift of 0.15 µV/°C.
The document provides detailed electrical specifications, absolute maximum ratings, and typical performance characteristics. It includes application notes for precision reference circuits and digital thermometer readouts, along with test circuit diagrams and outline dimensions for the TO-78 package.
| Offset Voltage (Vos) Max | 0.1 mV (MAT01AH) / 0.5 mV (MAT01GH) |
|---|---|
| Temperature Drift (TCVos) | 0.15 µV/°C |
| Current Gain (hFE) Min | 590 at 10 nA |
| Breakdown Voltage | 45 V |
| Low Noise Voltage | 0.23 µV p-p |
| Collector Current | 25 mA |
| Package Type | TO-78 |
The typical current gain is 590 at a collector current of 10 nA.
Application of reverse bias voltages in excess of 6 V may result in degradation of matching characteristics.