ES1F - ES1J Fast Rectifiers is a fast recovery diode produced by Fairchaid Semiconductor. It features low power consumption, high efficiency and super fast recovery.
This document provides design specifications for the Fairchild Semiconductor ES1F, ES1G, ES1H, and ES1J series of fast rectifiers. These devices are designed for surface mount applications and feature a low profile package with built-in strain relief.
The datasheet details absolute maximum ratings, thermal characteristics, electrical parameters such as forward voltage and reverse recovery time, and typical performance curves including current derating and junction capacitance.
| Maximum Repetitive Reverse Voltage (ES1F) | 300 V |
|---|---|
| Average Rectified Forward Current | 1.0 A |
| Non-repetitive Peak Forward Surge Current | 30 A |
| Storage Temperature Range | -55 to 150 °C |
| Power Dissipation | 1.47 W |
| Thermal Resistance, Junction to Ambient | 85 °C/W |
| Maximum Forward Voltage @ Ir =1.0A (ES1F) | 1.3 V |
| Maximum Reverse Recovery Time | 38 ns |
The maximum average rectified forward current is 1.0 A.
The maximum non-repetitive peak forward surge current is 30 A.