SHANGHAI TAIYONG 60mA Schottky Brrier Diode RB715
This document is a datasheet for the Shanghai Taiyong RB715, a 60mA Schottky Barrier Diode. The device is designed for general purpose detection and high-speed switching applications, offering low reverse current and a low forward voltage drop in the SOT-23 package.
The datasheet provides maximum ratings and electrical characteristics for the diode, including parameters such as reverse voltage, rectifying current, peak surge current, forward voltage, reverse current, and capacitance. It also specifies the power dissipation, junction temperature, and storage temperature limits.
| Peak Surge Current | 200 mA |
|---|---|
| Forward Voltage | 0.37 V |
| Reverse Current | uA |
| Capacitance | 2.0 pF |
| Power Dissipation | 0.2 W |
| Junction Temperature | 125 C |
The peak surge current is 200 mA at 60Hz.
The device can be stored between -40 C and 125 C, with a maximum junction temperature of 125 C.