National Semiconductor LMV248 Dual Band GSM Power Controller Datasheet

LMV248 dual band GSM power controller


National Semiconductor LMV248 Dual Band GSM Power Controller Datasheet - cover page
Brand
National Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
281 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
56D8A44D3BBD1328E5386AD2C7A28C66

About this manual

The LMV248 is an RF power amplifier controller designed for simple implementation of transmit power control loops in GSM and DCS/PCN mobile phones. It supports both GaAs HBT and bipolar RF power amplifiers and operates from a single supply of 2.5V to 5V. The device integrates an error amplifier with an input summing network, input and output band switches, input filters, and output drivers to replace multiple discrete parts.

What's inside

  • General Description
  • Features
  • Applications
  • Absolute Maximum Ratings
  • Operating Ratings
  • DC and AC Electrical Characteristics
  • Typical Performance Characteristics
  • Pin Description
  • Ordering Information

Specifications

Supply Voltage2.5V to 5V
Operating Temperature-40°C to 85°C
Shutdown Current0.15µA
PackageLLP-16

Frequently asked questions

What mobile phone standards does the LMV248 support?

The LMV248 allows simple implementation of transmit power control loops in GSM and DCS/PCN mobile phones.

What RF amplifier technologies are supported?

The device supports GaAs HBT and bipolar RF power amplifiers.

What is the shutdown current of the device?

The shutdown current is 0.15µA, enabling power saving in the Rx slot.

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