The document describes the features and characteristics of a product, including xxxxx and xxxxx.
This document is a technical datasheet for the NEC Electronics Inc. PS4008 Photo Interrupter module. The device contains a Gallium Arsenide (GaAs) light emitting diode and an NPN silicon photo-transistor, designed as a photo coupled interrupter.
The datasheet provides package dimensions in millimeters and inches, connection diagrams showing the Anode, Cathode, Emitter, and Collector pins. It also lists absolute maximum ratings for voltage, current, and power dissipation, along with electrical characteristics such as forward voltage, reverse current, switching time, and operating temperature ranges.
| Product Type | Photo coupled interrupter module |
|---|---|
| Forward Current (Diode) | 50 mA |
| Power Dissipation (Module) | 100 mW |
| Collector to Emitter Voltage (Transistor) | 30 V |
| Operating Temperature Range | -20 to +80 °C |
The module contains a gallium arsenide light emitting diode and an NPN silicon photo-transistor.
The device can operate at temperatures up to +80 °C.