The OPB862N series slotted optical switches from Optoelectronics feature an infrared emitting diode paired with an NPN phototransistor across a 3.18 mm gap. The fully enclosed housing prevents dust and ambient light interference, and the device is PCB‑mountable with .320" lead spacing.
The datasheet lists aperture options of 0.050" and 0.010", storage temperature from –40 °C to +85 °C, and detailed electrical parameters such as forward voltage, leakage currents, and power dissipation of 100 mW. Recommended cleaning agents are methanol or isopropyl alcohols, and soldering guidelines are provided.
| Lead spacing | 0.320 in |
|---|---|
| Aperture size options | 0.050" and 0.010" |
| Input diode forward voltage | 1.70 V @ 20 mA |
| Input diode reverse leakage current | 100 nA @ 2.0 V |
| Output transistor collector‑emitter voltage | 30.0 V |
| Output transistor emitter‑collector voltage | 5.0 V |
| Power dissipation (both diode and transistor) | 100 mW |
| On‑state collector current | 1.8 mA @ 20 mA, VCE=0.6 V |
The lead spacing is 0.320 inches.
Aperture sizes of 0.050" and 0.010" are offered.