MGFC5211 is a GaAs MMIC chip produced by Mitsubishi Electric. It is specially designed for 21.2~23.6GHz band High Power Amplifier (HPA). Its maximum working frequency is 21.2~23.6GHz, linear gain is greater than 13dB, and output power is greater than 23dBm.
The Mitsubishi Semiconductor MGFC5211 is a preliminary specification document for a Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC). It is specifically designed as a two-stage High Power Amplifier (HPA) for the K-band frequency range of 21.2 to 23.6 GHz.
Key features include a linear gain of at least 13 dB and an output power at 1 dB compression point (P1dB) greater than or equal to 23 dBm. The device operates with a drain supply voltage of 5V and a total DC current of 270mA.
| Frequency Range | 21.2 to 23.6 GHz |
|---|---|
| Linear Gain | > 13 dB |
| P1dB (Output Power) | > 23 dBm |
| DC Power Supply Voltage | 5V |
| Total DC Current | 270mA |
| Gain (Typical) | 13.0 dB |
| Input VSWR | 2:1 |
| Output VSWR | 2:1 |
The device operates in the K-band from 21.2 to 23.6 GHz.
The datasheet specifies a linear gain greater than or equal to 13 dB.
No, the document is marked as preliminary and states that some parametric limits are subject to change.