This document describes the features and characteristics of CE BZX97/C 2V4 THRU BZX97/C 51 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES. The diodes are made of silicon planar structure and the zener voltage is graded according to the international E24 standard. Other voltage tolerances are available upon request.
This document is a datasheet for the BZX97/C series of 0.5W silicon planar zener diodes manufactured by Shanghai Chenyi Electronics Co., Ltd. The components are housed in a DO-35 glass case and feature zener voltages ranging from 2.4V to 51V, graded according to the international E24 standard.
The datasheet provides absolute maximum ratings, including power dissipation of 500mW at 25°C and a junction temperature limit of 175°C. It also lists detailed electrical characteristics such as forward voltage, dynamic resistance, and reverse leakage current for various zener voltages.
| Power dissipation at TA=25°C | 500 mW |
|---|---|
| Junction temperature | 175 °C |
| Storage temperature range | -55 to +175 °C |
| Thermal resistance junction to ambient | 300 K/W |
| Forward voltage at IF=100mA | 1.0 V |
The junction temperature must not exceed 175 °C.
The forward voltage is at least 1.0 Vv when the forward current is 100mA.