Intersil ACS11MS Radiation Hardened Triple 3-Input AND Gate Datasheet

This product is a 3-input AND gate with single event latch-up function, which can operate reliably in any radiation environment.


Intersil ACS11MS Radiation Hardened Triple 3-Input AND Gate Datasheet - cover page
Brand
Intersil
Category
Chips
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
50 KB
Published
06 June, 2012
Updated
30 September, 2023
MD5 checksum
531EDF8B5B897A9BBF4DAFCD21C16732

About this manual

The Intersil ACS11MS is a Triple 3-Input AND Gate fabricated on a CMOS Silicon on Sapphire (SOS) process. This design provides immunity to Single Event Latch-up and ensures highly reliable performance in any radiation environment, offering significant power reduction compared to ALSTTL types.

What's inside

  • Features
  • Specifications
  • Applications
  • Ordering Information
  • Pinouts
  • Die Characteristics

Specifications

Process Technology1.25 Micron Radiation Hardened SOS CMOS
Latch-Up ImmunityFree Under any Conditions
Total Dose Rating3 x 10^5 RAD (Si)
SEU Immunity<1x 10^-9 Errors/Bit/Day
SEU LET Threshold>100MeV/(mg/cm^2)
Input Logic Levels (VIH)(0.7)(Vcc)
Output Current+8mA (Min)
Quiescent Supply Current-100A (Max)
Propagation Delay12ns (Max)

Frequently asked questions

Is the ACS11MS QML qualified?

Yes, it is QML Qualified Per MIL-PRF-38535 Requirements.

What is the maximum total radiation dose this gate can withstand?

The device remains latch-up free under a total dose of up to 3 x 10^5 RAD (Si).

What is the maximum propagation delay for this gate?

The maximum propagation delay is rated at 12ns.

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