JANSR2N7402 is a 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET from Intersil.
The Intersil JANSR2N7402 is an enhancement-mode silicon-gate power field-effect transistor (Vertical DMOS structure) specifically designed for commercial and military space applications. It features immunity to Single Event Effects (SEE), including Single Event Gate Rupture (SEGR), combined with 100K RAD(Si) total dose hardness. The device is suitable for harsh space environments while maintaining pre-RAD specifications for neutron tolerance.
Key electrical characteristics include a drain-to-source breakdown voltage of 500V, a continuous drain current of 3A, and an on-resistance (RDS(ON)) of 2.70 Ohms at 25°C. The datasheet provides absolute maximum ratings, electrical specifications under various temperatures, single event effects safe operating area curves, and screening information in accordance with MIL-S-19500.
| Continuous Drain Current | 3 A |
|---|---|
| Drain to Source On Resistance (Typical) | 2.70 Ohms |
| Total Dose Hardness | 100K RAD(Si) |
| Package Type | TO-257AA |
No, the device does not exhibit SEB or SEGR.
The device supports a continuous drain current of 3A.